发明名称 FLEXIBLE INTEGRATED CIRCUIT DEVICE LAYERS AND PROCESSES
摘要 <p>This disclosure provides systems, processes, and apparatus implementing and using techniques for fabricating flexible integrated circuit (IC) device layers. In one implementation, a sacrificial layer is deposited on a substrate. The sacrificial layer can include amorphous silicon or molybdenum, by way of example. One or more electronic components are formed on the sacrificial layer. A polymer coating is provided on the one or more electronic components to define a coated device layer. The sacrificial layer is removed to release the coated device layer from the substrate. The sacrificial layer can be removed using a xenon difluoride gas or by etching, for example. Coated device layers made in accordance with this process can be stacked. The substrate can be formed of glass, silicon, a plastic, a ceramic, a compound semiconductor, and/or a metal, depending on the desired implementation. The electronic component(s) can include a passive component such as a resistor, an inductor, or a capacitor. The electronic component(s) can also or alternatively include an active component such as a transistor.</p>
申请公布号 WO2012082358(A1) 申请公布日期 2012.06.21
申请号 WO2011US62417 申请日期 2011.11.29
申请人 QUALCOMM MEMS TECHNOLOGIES, INC.;SASAGAWA, TERUO;ARBUCKLE, BRIAN 发明人 SASAGAWA, TERUO;ARBUCKLE, BRIAN
分类号 H01L21/77;H01L21/78;H01L25/065 主分类号 H01L21/77
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