| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of suppressing short circuit caused by a generation of hillock on an upper surface of copper wiring formed on a contact plug at low cost by a simple method. <P>SOLUTION: An etching stopper film 16 having a slower etching rate than that of an interlayer insulating film, is formed on an upper surface of the interlayer insulating film 15 covering wiring 13. A first opening 16A is formed which passes through a part opposed to the wiring in the etching stopper film. Using a condition that the interlayer insulating film is etched easier than the etching stopper film, the interlayer insulating film positioned below the first opening is etched until the upper surface of the wiring is exposed, and a second opening 15A forming a contact hole with the first opening, is formed. A conductive film is deposited in the contact hole so as to fill the first opening to form a contact plug 27. A copper wiring 39 contacting with the upper surface of the contact plug is formed by an electrolytic plating method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
