METHOD FOR FORMING TIN FILM, NONVOLATILE MEMORY DEVICE USING IT AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method for forming a TiN thin film, a nonvolatile memory device, and a manufacturing method thereof are provided to easily control the thickness of a thin film by changing a cycle number of a Tin thin film forming process. CONSTITUTION: An insulation film pattern(120) including an opening unit(125) is formed on a substrate. A switching device is formed in the opening. A bottom electrode(147') comprising a TiN thin film is formed on the switching device. A variable resistive material pattern(150') is formed on the bottom electrode. A phase change material pattern(162) and a top electrode contact(164) are formed on the bottom electrode.