发明名称 |
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To reduce defects of a semiconductor substrate; manufacture a semiconductor substrate at a higher yield with less defects; and manufacture a semiconductor device at a higher yield. <P>SOLUTION: The semiconductor substrate manufacturing method includes providing a semiconductor layer on a support substrate via an oxide insulation layer, removing an insulation layer on a surface of the semiconductor layer after enhancing adhesion of the support substrate and the oxide insulation layer at an edge portion of the semiconductor layer, and irradiating the semiconductor layer with laser beams to obtain the planarized semiconductor layer. In order to enhance adhesion of the support substrate and the oxide insulation layer at the edge portion of the semiconductor layer, the surface of the semiconductor layer is irradiated with laser beams. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012119669(A) |
申请公布日期 |
2012.06.21 |
申请号 |
JP20110244073 |
申请日期 |
2011.11.08 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
NEI TAKAMASA;SHIMOMURA AKIHISA |
分类号 |
H01L27/12;B23K26/00;B23K26/36;H01L21/02;H01L21/268;H01L21/336;H01L21/8234;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/108;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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