发明名称 |
METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE |
摘要 |
A method for forming a field effect transistor and Schottky diode includes forming a well region in a first portion of a silicon region where the field effect transistor is to be formed but not in a second portion of the silicon region where the Schottky diode is to be formed. Gate trenches are formed extending into the silicon region. A recessed gate is formed in each gate trench. A dielectric cap is formed over each recessed gate. Exposed surfaces of the well region are recessed to form a recess between every two adjacent trenches. Without masking any portion of the active area, a zero-degree blanket implant is performed to form a heavy body region of the second conductivity type in the well region between every two adjacent trenches.
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申请公布号 |
US2012156845(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201113325047 |
申请日期 |
2011.12.13 |
申请人 |
KOCON CHRISTOPHER BOGUSLAW;SAPP STEVEN;THORUP PAUL;PROBST DEAN;HERRICK ROBERT;LOSEE BECKY;YILMAZ HAMZA;REXER CHRISTOPHER LAWRENCE;CALAFUT DANIEL;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KOCON CHRISTOPHER BOGUSLAW;SAPP STEVEN;THORUP PAUL;PROBST DEAN;HERRICK ROBERT;LOSEE BECKY;YILMAZ HAMZA;REXER CHRISTOPHER LAWRENCE;CALAFUT DANIEL |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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