| 摘要 |
An alternate page by page scheme for the multi-state programming of data into a non-volatile memory is presented. Pages of data are written a page at a time onto word lines of the memory. After all of the pages of data are written to a first level of resolution onto one word line, the memory goes back to the adjacent word line (on which all of the pages of data have previously been written the first level of resolution) and refines the accuracy with which the data had been written on this preceding word line. This can reduce the effects on the data of capacitive coupling between the word lines.
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