发明名称 METHOD OF FORMING SEMICONDUCTOR DEVICE
摘要 A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.
申请公布号 US2012156823(A1) 申请公布日期 2012.06.21
申请号 US201113281870 申请日期 2011.10.26
申请人 MYUNG JONG-YUN;LEE HYUEK-JAE;HONG JI-SUN;CHO TAE-JE;KANG UN-BYOUNG;JANG HYUNG-SUN;KIM EUN-MI;KIM JUNG-HWAN;MIN TAE-HONG 发明人 MYUNG JONG-YUN;LEE HYUEK-JAE;HONG JI-SUN;CHO TAE-JE;KANG UN-BYOUNG;JANG HYUNG-SUN;KIM EUN-MI;KIM JUNG-HWAN;MIN TAE-HONG
分类号 H01L31/18;H01L21/50;H01L21/78 主分类号 H01L31/18
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