发明名称 |
METHOD OF FORMING SEMICONDUCTOR DEVICE |
摘要 |
A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth.
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申请公布号 |
US2012156823(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201113281870 |
申请日期 |
2011.10.26 |
申请人 |
MYUNG JONG-YUN;LEE HYUEK-JAE;HONG JI-SUN;CHO TAE-JE;KANG UN-BYOUNG;JANG HYUNG-SUN;KIM EUN-MI;KIM JUNG-HWAN;MIN TAE-HONG |
发明人 |
MYUNG JONG-YUN;LEE HYUEK-JAE;HONG JI-SUN;CHO TAE-JE;KANG UN-BYOUNG;JANG HYUNG-SUN;KIM EUN-MI;KIM JUNG-HWAN;MIN TAE-HONG |
分类号 |
H01L31/18;H01L21/50;H01L21/78 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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