发明名称 |
Double-Sided Semiconductor Device and Method of Forming Top-Side and Bottom-Side Interconnect Structures |
摘要 |
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected.
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申请公布号 |
US2012153452(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201213408715 |
申请日期 |
2012.02.29 |
申请人 |
KIM OHHAN;PARK JOUNGUN;KIM SUNMI;STATS CHIPPAC, LTD. |
发明人 |
KIM OHHAN;PARK JOUNGUN;KIM SUNMI |
分类号 |
H01L23/538 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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