发明名称 GAS INJECTION APPARATUS AND SUBSTRATE PROCESSING APPARATUS USING SAME
摘要 Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate. In at least one gas injection unit of the plurality of gas injection units, the process gas is introduced into the gas diffusion space at a plurality of points.
申请公布号 US2012152171(A1) 申请公布日期 2012.06.21
申请号 US201013393498 申请日期 2010.08.24
申请人 LEE JUNG-HWAN;PARK WOO-YOUNG;HAHM TAE-HO;WONIK IPS CO., LTD. 发明人 LEE JUNG-HWAN;PARK WOO-YOUNG;HAHM TAE-HO
分类号 C23C16/455 主分类号 C23C16/455
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