METHOD OF FABRICATING OXIDE THIN FILM TRANSISTOR

摘要

PURPOSE: A method for manufacturing an oxide thin film transistor is provided to prevent the deterioration of an oxide semiconductor by suppressing the change of a carrier density in a channel region applying an etch stopper. CONSTITUTION: A gate electrode(121) is formed on a substrate(110). A gate insulation layer(115a), an oxide semiconductor layer, and a first insulation layer are formed on the substrate and the gate electrode. An active layer(124) and an insulation layer pattern are formed on the upper side of the gate electrode. A second insulation layer is formed on the substrate with the active layer and the insulation layer pattern. A first etch stopper(125a) and a second etch stopper(125b) are formed on the active layer.