| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of forming a film of uniform thickness and quality, and a photovoltaic device having a uniform thickness and quality. <P>SOLUTION: A plasma processing apparatus 1 comprises a first electrode 3 capable of holding a substrate, and a second electrode 4 disposed to face the first electrode, provided with a plurality of gas supply ports 4a in the portion facing the first electrode, and subjected to high-frequency power. The plurality of gas supply ports on the second electrode is provided along concentric circles, and the distance between the adjacent concentric circles varies from the inner portion to the outer portion. A photoelectric converting layer containing an amorphous silicon semiconductor or a microcrystalline silicon semiconductor is formed on a transparent conductive film by the plasma processing apparatus 1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
