| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device in which an electron traveling layer and an electron supply layer of good crystallinity can be obtained while minimizing warpage, or the like, due to the difference of thermal expansion coefficient of a material, and to provide a method of manufacturing the same. <P>SOLUTION: A substrate 1, an electron traveling layer 3 formed on the substrate 1, an electron supply layer 4 formed above the electron traveling layer 3, and a buffer layer 2 formed between the substrate 1 and the electron traveling layer 3 and containing Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N(0≤x≤1) are provided. The value of x represents a plurality of maximums and a plurality of minimums in the thickness direction of the buffer layer 2, and variation of the value of x is 0.5 or less in any region where the thickness in the buffer layer 2 is 1 nm. <P>COPYRIGHT: (C)2012,JPO&INPIT |
