| 发明名称 |
GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER |
| 摘要 |
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
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| 申请公布号 |
US2012156819(A1) |
申请公布日期 |
2012.06.21 |
| 申请号 |
US201113036273 |
申请日期 |
2011.02.28 |
| 申请人 |
ZHU MINGWEI;AGRAWAL VIVEK;PATIBANDLA NAG B.;NALAMASU OMKARAM |
发明人 |
ZHU MINGWEI;AGRAWAL VIVEK;PATIBANDLA NAG B.;NALAMASU OMKARAM |
| 分类号 |
H01L33/06;C23C16/34;C23C16/44;C23C16/56;C30B25/08;H01L21/203 |
主分类号 |
H01L33/06 |
| 代理机构 |
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