发明名称 |
PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS |
摘要 |
Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station. |
申请公布号 |
WO2012040317(A3) |
申请公布日期 |
2012.06.21 |
申请号 |
WO2011US52537 |
申请日期 |
2011.09.21 |
申请人 |
NOVELLUS SYSTEMS, INC.;LI, MING;KANG, HU;SRIRAM, MANDYAM;LAVOIE, ADRIEN |
发明人 |
LI, MING;KANG, HU;SRIRAM, MANDYAM;LAVOIE, ADRIEN |
分类号 |
H01L21/31;H01L21/205 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|