发明名称 PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS
摘要 Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.
申请公布号 WO2012040317(A3) 申请公布日期 2012.06.21
申请号 WO2011US52537 申请日期 2011.09.21
申请人 NOVELLUS SYSTEMS, INC.;LI, MING;KANG, HU;SRIRAM, MANDYAM;LAVOIE, ADRIEN 发明人 LI, MING;KANG, HU;SRIRAM, MANDYAM;LAVOIE, ADRIEN
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
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