发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To make it possible to, on the occasion of manufacturing a resin-sealed type semiconductor device (1), carry out joining work between members at a relatively low temperature. <P>SOLUTION: On the occasion of joining a heat sink (2) and a lead frame (3) together, first, an application step is carried out to apply a resin solution (L), which is obtained by dissolving a polyimide-based resin in a solvent, to a joining portion of an upper surface of the heat sink (2). Next, a first drying step is carried out to dry the applied resin solution (L) until it reaches a semi-dried state (where the amount of a residual solvent is within a range of 13% to 40%). Then, a thermocompression joining step is carried out to join a joining target portion (3a) of the lead frame (3) to the heat sink (2) through the resin solution (L) under the semi-dried state. Following this, a second drying step is carried out to further dry the resin solution (L). <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012119508(A) 申请公布日期 2012.06.21
申请号 JP20100268285 申请日期 2010.12.01
申请人 DENSO CORP 发明人 KAWASHIMA KATSUHIKO;MIYAWAKI SEITARO;TAKEI HIROSHI;OGINO AKIHIKO
分类号 H01L23/29;H01L21/52 主分类号 H01L23/29
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