发明名称 APPARATUS AND METHOD FOR PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL
摘要 <P>PROBLEM TO BE SOLVED: To provide an apparatus and method that can produce a high-quality aluminum nitride single crystal. <P>SOLUTION: The method for producing an aluminum nitride single crystal comprises making a raw material 1 comprising aluminum nitride stored in a growth vessel 2 sublimate while introducing a nitrogen gas into the growth vessel 2 via a gas introduction part 2f and discharging the gas out of the growth vessel 2 via a gas discharging part 2e to obtain the aluminum nitride single crystal by developing a crystal 12 from a seed crystal 10 in the growth vessel 2. The method for producing the aluminum nitride single crystal is characterized by raising the temperature at the gas discharging part 2e higher than that at the tip end part of the crystal 12. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012116678(A) 申请公布日期 2012.06.21
申请号 JP20100265874 申请日期 2010.11.30
申请人 FUJIKURA LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY 发明人 KAMATA HIROYUKI;KATO TOMOHISA;NAGAI ICHIRO;MIURA TOMONORI
分类号 C30B29/38;C30B23/06 主分类号 C30B29/38
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