MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A MOS transistor and the manufacturing method thereof are provided. Said MOS transistor includes: a silicon on insulator (SOI) substrate, said SOI substrate includes a silicon substrate layer, an ultrathin buried oxide (BOX) layer and an ultrathin SOI layer; a metal gate layer located on said SOI substrate; and a ground halo located in said silicon substrate layer and beneath said metal gate layer. Said method for manufacturing the MOS transistor includes: providing a SOI substrate, wherein said SOI substrate includes a silicon substrate layer, an ultrathin BOX layer and an ultrathin SOI layer; forming a dummy gate conductor layer on said SOI substrate, and forming a spacer surrounding said dummy gate conductor layer; removing said dummy gate conductor layer, so as to form an opening; performing ion implantation to said opening to form a ground halo in said silicon substrate layer; and forming a metal gate layer in said opening.