PATTERNING METHOD

摘要

Provided is a patterning method that can greatly reduce process costs and environmental impact. This patterning method comprises: a film forming step of forming a functional film (2) on a substrate (1); and an etching step of irradiating vacuum ultraviolet rays (12) from above a mask (4) having an arbitrarily-defined opening part (4A) situated above the functional film, so as to dry etch the functional film (2) positioned below the opening part (4A). The dry etching step can be carried out in an atmosphere containing oxygen. For example, dry air may be used in the processing gas. In addition, N2 may be supplied as an inert gas for the substrate (1) placed in air.