发明名称 POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME
摘要 PURPOSE: A positive type resist composition for immersion exposure and a pattern forming method using the same are provided to reduce the elution of resist components. CONSTITUTION: A positive type resist composition for immersion exposure includes a resin, an acid generating compound, an alkali soluble compound, and a solvent. The acid generating compound generates acid by the irradiation of active ray or radiation ray. The dissolution of the resin in an alkali developing solution increases by the action of the acid. The resin includes a monocyclic or polycyclic aliphatic hydrocarbon structure. The alkali soluble compound includes at least one fluorine atom. The resin and the alkali soluble compound are different. The resin includes a repeating unit represented by chemical formula pA. In chemical formula pA, R is a hydrogen atom, a halogen atom, or a C1 to C4 alkyl group; a plurality of Rs is identical or different; A is a single bond or one or the combination of an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a sulfone amine group, a urethane group, and a urea group; R1 to R3 are respectively alkyl groups, cycloalkyl groups, or alkenyl groups; and at least two of R1 to R3 are capable of forming a ring.
申请公布号 KR20120065983(A) 申请公布日期 2012.06.21
申请号 KR20120049158 申请日期 2012.05.09
申请人 FUJIFILM CORPORATION 发明人 KANDA HIROMI;INABE HARUKI
分类号 G03F7/039;G03F7/00 主分类号 G03F7/039
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