| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel semiconductor memory device which consumes less power. <P>SOLUTION: A source of a write transistor WTr_n_m, a gate of a read transistor RTr_n_m, and one electrode of a capacitor CS_n_m are connected; a gate and drain of the write transistor WTr_n_m are connected to a write word line WWL_n and a write bit line WBL_m, respectively; the other electrode of the capacitor CS_n_m is connected to a read word line RWL_n; a drain of the read transistor RTr_n_m is connected to a read bit line RBL_m. Here, the potential of the read bit line RBL_m is input to an inverting amplifier circuit such as a flip-flop circuit FF_m, and the potential which has been inverted by the inverting amplifier circuit is output to the write bit line WBL_m. <P>COPYRIGHT: (C)2012,JPO&INPIT |
