发明名称 |
METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION |
摘要 |
A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material.
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申请公布号 |
US2012156836(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201013380150 |
申请日期 |
2010.06.28 |
申请人 |
SHEALY JAMES R.;BROWN RICHARD;CORNELL UNIVERSITY |
发明人 |
SHEALY JAMES R.;BROWN RICHARD |
分类号 |
H01L21/335;H01L21/20 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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