| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a crystalline silicon thin-film semiconductor device having excellent crystallinity and having excellent electrical characteristics, especially low leakage current. <P>SOLUTION: A thin-film transistor in which an amorphous silicon layer is formed on a source electrode and a drain electrode, and then a microcrystalline silicon layer, a gate insulating layer, and a gate electrode are formed on the amorphous silicon layer comprises: a region in which the amorphous silicon layer, and the source electrode and the drain electrode are connected via the microcrystalline silicon layer; and a region in which the amorphous silicon layer, and the source electrode and the drain electrode are directly connected. <P>COPYRIGHT: (C)2012,JPO&INPIT |
