发明名称 METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN
摘要 A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.
申请公布号 US2012156882(A1) 申请公布日期 2012.06.21
申请号 US201113242331 申请日期 2011.09.23
申请人 LEE YOUNG-JAE;YOO KYOUNG JONG;KIM JIN SU;LEE JUN;LEE YONG IN;YOON JUNBO;YEON JEONGHO;LEE JOO-HYUNG;LEE JEONG OEN;LG INNOTEK CO., LTD. 发明人 LEE YOUNG-JAE;YOO KYOUNG JONG;KIM JIN SU;LEE JUN;LEE YONG IN;YOON JUNBO;YEON JEONGHO;LEE JOO-HYUNG;LEE JEONG OEN
分类号 H01L21/308 主分类号 H01L21/308
代理机构 代理人
主权项
地址