发明名称 |
METHOD FOR FABRICATING LARGE-AREA NANOSCALE PATTERN |
摘要 |
A method for fabricating a large-area nanoscale pattern includes: forming multilayer main thin films isolated by passivation layers; patterning a first main thin film to form a first main pattern; forming a first spacer pattern with respect to the first main pattern; and forming a second main pattern by transferring the first spacer pattern onto a second main thin film. By using multilayer main thin films isolated by different passivation films, spacer lithography capable of reducing a pattern pitch can be repetitively performed, and the pattern pitch is repetitively reduced without shape distortion after formation of micrometer-scale patterns, thereby forming nanometer-scale fine patterns uniformly over a wide area.
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申请公布号 |
US2012156882(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201113242331 |
申请日期 |
2011.09.23 |
申请人 |
LEE YOUNG-JAE;YOO KYOUNG JONG;KIM JIN SU;LEE JUN;LEE YONG IN;YOON JUNBO;YEON JEONGHO;LEE JOO-HYUNG;LEE JEONG OEN;LG INNOTEK CO., LTD. |
发明人 |
LEE YOUNG-JAE;YOO KYOUNG JONG;KIM JIN SU;LEE JUN;LEE YONG IN;YOON JUNBO;YEON JEONGHO;LEE JOO-HYUNG;LEE JEONG OEN |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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