发明名称 METALLIC THERMAL JOINT FOR HIGH POWER DENSITY CHIPS
摘要 A method for the assembly of a semiconductor package that includes cleaning a surface of a chip and a surface of a heat removal device by reverse sputtering is given. The method includes sequentially coating the surface of the chip and the surface of the heat removal device with an adhesive layer, a barrier layer, and a protective layer over a target joining area. The chip and the heat removal device are placed into carrier fixtures and preheated to a target temperature. Then a metallic thermal interface material (TIM) preform is mechanically rolled onto the surface of the chip and the first and the second carrier fixtures are attached together such that the metallic TIM layer on the surface of the chip is joined to the coated surface of the heat removal device through a fluxless process. The method includes heating the joined carrier fixtures in a reflow oven.
申请公布号 US2012153453(A1) 申请公布日期 2012.06.21
申请号 US20100971737 申请日期 2010.12.17
申请人 ORACLE AMERICA, INC. 发明人 ANKIREDDI SESHASAYEE;GEKTIN VADIM;JONES JAMES A.;STERN MARGARET B.
分类号 H01L23/34;H01L21/50 主分类号 H01L23/34
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