发明名称 |
DUAL-GATE TRANSISTORS |
摘要 |
A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.
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申请公布号 |
US2012154025(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US201213345038 |
申请日期 |
2012.01.06 |
申请人 |
CHUA LAY-LAY;HO PETER KIAN-HOON;FRIEND RICHARD HENRY;PLASTIC LOGIC LTD |
发明人 |
CHUA LAY-LAY;HO PETER KIAN-HOON;FRIEND RICHARD HENRY |
分类号 |
G05F3/02;H01L27/28;H01L29/00 |
主分类号 |
G05F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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