发明名称 RESIST PATTERN IMPROVING MATERIAL, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
摘要 To provide a resist pattern improving material, containing: a compound represented by the following general formula (1), or a compound represented by the following general formula (2), or both thereof; and water: where R1 and R2 are each independently a hydrogen atom, or a C1-C3 alkyl group; m is an integer of 1 to 3; and n is an integer of 3 to 30, where p is an integer of 8 to 20; q is an integer of 3 to 30; and r is an integer of 1 to 8.
申请公布号 US2012156879(A1) 申请公布日期 2012.06.21
申请号 US201113242206 申请日期 2011.09.23
申请人 FUJITSU LIMITED 发明人 KOZAWA MIWA;NOZAKI KOJI
分类号 H01L21/311;C07C43/13;C07C43/23;C08K5/06;C08L29/04;C08L29/14;C08L31/04;C08L39/06;C09D7/00;G03F7/16 主分类号 H01L21/311
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