发明名称 INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME
摘要 A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.
申请公布号 US2012153427(A1) 申请公布日期 2012.06.21
申请号 US20100973097 申请日期 2010.12.20
申请人 CHEN CHENG-PO;ANDARAWIS EMAD ANDARAWIS;TILAK VINAYAK;STUM ZACHARY 发明人 CHEN CHENG-PO;ANDARAWIS EMAD ANDARAWIS;TILAK VINAYAK;STUM ZACHARY
分类号 H01L29/06;H01L21/762 主分类号 H01L29/06
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