发明名称 |
INTEGRATED CIRCUIT AND METHOD OF FABRICATING SAME |
摘要 |
A method includes providing a substrate with at least one semiconducting layer. The method also includes forming a plurality of isolation barriers within the at least one semiconducting layer, thereby forming a plurality of device islands. The method further includes inserting a plurality of electronic devices into a portion of the at least one semiconducting layer such that each electronic device is substantially isolated from each other electronic device by the device islands.
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申请公布号 |
US2012153427(A1) |
申请公布日期 |
2012.06.21 |
申请号 |
US20100973097 |
申请日期 |
2010.12.20 |
申请人 |
CHEN CHENG-PO;ANDARAWIS EMAD ANDARAWIS;TILAK VINAYAK;STUM ZACHARY |
发明人 |
CHEN CHENG-PO;ANDARAWIS EMAD ANDARAWIS;TILAK VINAYAK;STUM ZACHARY |
分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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