GAS INJECTION SYSTEM FOR CHEMICAL VAPOR DEPOSITION USING SEQUENCED VALVES
摘要
A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
申请公布号
WO2012082225(A1)
申请公布日期
2012.06.21
申请号
WO2011US57227
申请日期
2011.10.21
申请人
VEECO INSTRUMENTS INC.;QUINN, WILLIAM E.;ARMOUR, ERIC A.