发明名称 GAS INJECTION SYSTEM FOR CHEMICAL VAPOR DEPOSITION USING SEQUENCED VALVES
摘要 A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.
申请公布号 WO2012082225(A1) 申请公布日期 2012.06.21
申请号 WO2011US57227 申请日期 2011.10.21
申请人 VEECO INSTRUMENTS INC.;QUINN, WILLIAM E.;ARMOUR, ERIC A. 发明人 QUINN, WILLIAM E.;ARMOUR, ERIC A.
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
主权项
地址