| 摘要 |
A semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first conductive type well and a second conductive type well disposed on and/or over a semiconductor substrate; a first gate and a second gate disposed on and/or over the first conductive type well and the second conductive type well, respectively; a second conductive type first ion implantation region disposed in the first conductive type well at one side of the first gate and a second conductive type second ion implantation region disposed in the first conductive type well at the other side of the first gate; a first conductive type first ion implantation region disposed in the second conductive type well at one side of the second gate and a first conductive type second ion implantation region disposed in the second conductive type well at the other side of the second gate; and a line electrically connecting the second conductive type second ion implantation region with the first conductive type first ion implantation region. |
