| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that is free from Cd and has further high photoelectric conversion efficiency. <P>SOLUTION: The photoelectric conversion element comprises: a light absorption layer that is provided on a lower electrode layer and contains Cu, a group III-B element, and a group VI-B element; a semiconductor layer that is provided above the light absorption layer and contains a group II-VI compound or a group III-VI element compound; and an Ag-doped layer that is provided on the light absorption layer at the semiconductor layer side and contains Ag. <P>COPYRIGHT: (C)2012,JPO&INPIT |
