| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce thermal shock generated in a semiconductor element in a cooling medium. <P>SOLUTION: A semiconductor device 1 comprises: a cooling vessel 2 in which a cooling medium 9 is stored; a substrate 3 provided in the cooling vessel 2; and a semiconductor element 4 disposed on the substrate 3. The substrate 3 and the semiconductor element 4 are disposed in the cooling medium 9, and the substrate 3 comprises a first region 31 in contact with the semiconductor element 4 and a second region 32 which is adjacent to the first region 31 and whose surface is exposed in the cooling medium 9. The second region 32 is a porous material with a larger porosity than that of the first region 31. Since air bubbles can be removed before they become excessively large on the top surface of the semiconductor element 4, it is possible to reduce the possibility that thermal shock is generated on the top surface of the semiconductor element 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
