THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME
摘要
Some embodiments include a memory device and methods of forming the memory device. One such memory device includes a first group of memory cells, each of the memory cells of the first group being formed in a cavity of a first control gate located in one device level of the memory device. The memory device also includes a second group of memory cells, each of the memory cells of the second group being formed in a cavity of a second control gate located in another device level of the memory device. Additional apparatus and methods are described.
申请公布号
WO2012009140(A3)
申请公布日期
2012.06.21
申请号
WO2011US41888
申请日期
2011.06.24
申请人
MICRON TECHNOLOGY, INC.;TANG, SANH, D.;ZAHURAK, JOHN, K.