发明名称 Nanowire Device with Alumina Passivation Layer and Methods of Making Same
摘要 In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.
申请公布号 US2012153250(A1) 申请公布日期 2012.06.21
申请号 US201213353087 申请日期 2012.01.18
申请人 BANDGAP ENGINEERING, INC. 发明人 MODAWAR FARIS;BLACK MARCIE R.;MURPHY BRIAN;MILLER JEFF;JURA MIKE
分类号 H01L31/0352 主分类号 H01L31/0352
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