发明名称 MEMORY BUS ARCHITECTURE FOR CONCURRENTLY SUPPORTING VOLATILE AND NON-VOLATILE MEMORY MODULES
摘要 A memory/storage module is provided that implements a solid state drive compatible with Serial Advanced Technology Attachment (SATA) or Serial Attached SCSI (SAS) signaling on a double-data-rate compatible socket. A detachable daughter card may be coupled to the memory module for converting a memory bus voltage to a second voltage for memory devices on the memory module. Additionally, a hybrid memory bus on a host system is provided that supports either DDR-compatible memory modules and/or SATA/SAS-compatible memory modules. In one example, the memory/storage module couples to a first bus (DDR3 compatible socket) to obtain voltage and/or other signals, but uses a second bus for data transfers. In another example, the memory module may repurpose/reuse electrical paths that typically carry non-data signals for data traffic to/from the memory/storage module. Such data traffic for the memory/storage module permits concurrent data traffic for other memory modules on the same memory bus.
申请公布号 US2012159045(A1) 申请公布日期 2012.06.21
申请号 US201113236416 申请日期 2011.09.19
申请人 HINKLE JONATHAN R.;SWEERE PAUL;SANMINA-SCI CORPORATION 发明人 HINKLE JONATHAN R.;SWEERE PAUL
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
主权项
地址