| 摘要 |
A semiconductor device and a method for forming the same are disclosed. A method for forming a semiconductor device includes forming a trench by etching a semiconductor substrate, forming a barrier metal layer having a thickness of 100 Å or less over a surface of the trench, forming a nucleation layer over the barrier metal layer, configured to include a &bgr;-tungsten (&bgr;-W) structure, and forming a bulk layer over the nucleation layer so as to bury the bottom of the trench. As a result, resistivity can be reduced and a stable-phase barrier metal layer can be obtained. In addition, productivity is improved so that gate resistance is prevented from increasing. |
