| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve stable operation by preventing the occurrence of self turn-on in a semiconductor device. <P>SOLUTION: A semiconductor device comprises: a substrate 1; a semiconductor stacked structure 2 that is formed on the substrate and includes an electron transit layer 6 and an electron supply layer 7; a gate electrode 3, a source electrode 4, and a drain electrode 5 that are provided above the semiconductor stacked structure; a gate pad 10, a source pad 11, and a drain pad 12 that are provided above the gate electrode, the source electrode, and the drain electrode and are connected to the gate electrode, the source electrode, and the drain electrode respectively; and a conductive layer 1 provided below the gate pad, the source pad, and the drain pad. The distance between the gate pad and the source pad is made shorter than that between the gate pad and the drain pad. <P>COPYRIGHT: (C)2012,JPO&INPIT |
