| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with high efficiency. <P>SOLUTION: A semiconductor light-emitting element comprises an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting part. The light-emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light-emitting layer. The first light-emitting layer includes a first barrier layer, a first well layer provided between the n-type semiconductor layer and the first barrier layer, a first n-side intermediate layer provided between the first well layer and the first barrier layer, and a first p-side intermediate layer provided between the first n-side intermediate layer and the first barrier layer. An In composition ratio of the first n-side intermediate layer decreases along a first direction toward the p-type semiconductor layer from the n-type semiconductor layer. An In composition ratio of the first p-side intermediate layer decreases along the first direction. An average rate of change of the In composition ratio of the first p-side intermediate layer along the first direction is lower than that of the first n-side intermediate layer along the first direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
