| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an unleaded low-melting glass composition including substantially no PbO for sealing an electronic material substrate. <P>SOLUTION: The unleaded low-melting glass composition includes: 1-6 mass% of SiO<SB POS="POST">2</SB>; 5-12 mass% of B<SB POS="POST">2</SB>O<SB POS="POST">3</SB>; 0-5 mass% of Al<SB POS="POST">2</SB>O<SB POS="POST">3</SB>; 5-20 mass% of ZnO; 0.1-3 mass% of RO(MgO+CaO+SrO+BaO); 0.1-7 mass% of CuO; and 60-75 mass% of Bi<SB POS="POST">2</SB>O<SB POS="POST">3</SB>. An electrically-conductive paste material using the unleaded low-melting glass composition is also provided. In the unleaded low-melting glass composition, a coefficient of thermal expansion at 30-300°C is (70-100)×10<SP POS="POST">-7</SP>/°C, and a softening point is 400-500°C. <P>COPYRIGHT: (C)2012,JPO&INPIT |
