| 摘要 |
A storage device is provided with a plurality of pairs of memory blocks, which have a storage layer which stores information and is configured to have a plurality of storage elements which store the information in the storage layer by the orientation of the magnetization of the storage layer being changed in accordance with the application of a writing voltage and so that selective application of the writing voltage is possible in accordance with input information to one storage element, and writing control sections, which store information which is to be written into each of the storage elements in a shift register, output one piece of information from the shift register, determine whether or not writing of the output information succeeds, and when writing has failed, the same information is output again, and when writing is successful, the next piece of information is output from the shift register.
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