| 摘要 |
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming an isolation layer for defining an active region by using the hard mask pattern, forming a buried gate in and across the active region and the isolation layer over the substrate, forming an inter-layer dielectric layer over the substrate, forming a storage node contact hole that exposes the hard mask pattern by selectively etching the inter-layer dielectric layer, extending the storage node contact hole to expose the active region by removing the hard mask pattern exposed under the storage node contact hole, and forming a storage node contact plug that fills the extended storage node contact hole. |
