CONTINUOUS METAL SEMICONDUCTOR ALLOY VIA FOR INTERCONNECTS

摘要

Methods of forming a semiconductor structure including a semiconductor nanowire or epitaxial semiconductor material which extends from at least a surface of source region and the drain region are provided. The methods include converting an upper portion of the source region and the drain region and the semiconductor nanowire or epitaxial semiconductor material into a continuous metal semiconductor alloy. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each of the source region and the drain region, and a vertical pillar portion extending upwardly from the lower portion.