SOLID SOLUTION INDUCING LAYER FOR WEAK EPITAXY GROWTH OF NON-PLANAR PHTHALOCYANINE

摘要

The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.