| 摘要 |
PURPOSE: A high-k metal gate device is provided to increase dopant activation by improving solid solubility. CONSTITUTION: A substrate(105) includes a device region(110). The device region is surrounded with an insulation region(180). A metal gate electrode layer(165) is formed on the substrate. A buffer gate electrode layer is formed on the upper side of the metal gate electrode layer. A top gate electrode layer(170) is formed on the buffer gate electrode layer.
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