| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-characteristic nitride semiconductor element reduced in leakage current by improving the crystallinity of a nitride semiconductor grown on the upper part of a zinc oxide-based compound and preventing the generation of film peeling or cracks while using the zinc oxide-based compound such as Mg<SB>x</SB>Zn<SB>1-x</SB>O (0≤x≤0.5) as a substrate. <P>SOLUTION: A substrate 1 is made of a zinc oxide-based compound such as Mg<SB>x</SB>Zn<SB>1-x</SB>O (0≤x≤0.5). A first nitride semiconductor layer 2 is formed so as to contact with the substrate 1. A mask layer 4 having an opening and a second nitride semiconductor layer 5 selectively grown from the opening to a lateral direction are formed on the first nitride semiconductor layer 2, and nitride semiconductor layers 6-8 are laminated so as to form a semiconductor element on the second nitride semiconductor layer 5. <P>COPYRIGHT: (C)2007,JPO&INPIT |
