METHOD OF FABRICATING LOW TEMPERATURE SOLUTION-PROCESSED OXIDE THIN FILM AND TRANSISTORS COMPRISING THE SAME

摘要

PURPOSE: A method for manufacturing a low temperature solution based oxide semiconductor thin film and a thin film transistor including the same are provided to reduce costs due to a high temperature process by forming an oxide semiconductor thin film at the lower temperature than 350 degrees centigrade. CONSTITUTION: A gate electrode is formed on a substrate. A gate insulation layer is formed on the substrate including the gate electrode. An oxide semiconductor layer is formed on the gate insulation layer. An oxide semiconductor thin film is formed on the substrate by thermally processing oxide semiconductor solutions sprayed on the substrate below 350 degrees centigrade.