Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films

摘要

The present invention is a method of depositing an intrinsically compressively stressed silicon nitride (SiN) or silicon carbonitride (SiCN) thin films, comprising depositing the film from an amino vinylsilane-based precursor using plasma enhanced chemical vapor deposition (PECVD). Exemplary amino vinylsilane-based precursors include Bis(iso-propylamino)vinylmethylsilane (BIPAVMS) and Bis(iso-propylamino)divinylsilane (BIPADVS).