| 摘要 |
PURPOSE: A substrate processing apparatus for controlling a height of an antenna is provided to improve process performance necessary for substrate processing by appropriately controlling plasma generation conditions of within a chamber. CONSTITUTION: A height of an antenna(30) is controlled by an internal space or a dielectric window(20) of a chamber(10). An upper structure(50) is divided into a supporting part(151) and a lifting part(152). A gas supply line(75) supplying a process gas to a shower head(70) is arranged toward the supporting part. A jig coupling part is installed on an upper portion of the supporting part in the upper structure. A lifting and driving mechanism is installed in a connection portion of a vertical beam and an upper chamber(11). The upper structure is lifted from an upper chamber. The height of an antenna is controlled by the lifting of the upper structure. |
