发明名称 HIGH PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUSES, METHODS, AND COMPOSITIONS PRODUCED THEREWITH
摘要 A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.
申请公布号 EP2464760(A1) 申请公布日期 2012.06.20
申请号 EP20100808760 申请日期 2010.08.12
申请人 GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC. 发明人 DIETZ, NIKOLAUS
分类号 C23C16/00;C23C16/30 主分类号 C23C16/00
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