发明名称 |
Apparatus for manufacturing silicon carbide single crystal |
摘要 |
An apparatus for manufacturing a silicon carbide single crystal (20) grows the silicon carbide single crystal on a seed crystal (5) by supplying a material gas (3) from below the seed crystal. The apparatus includes a heating container (8) and a base (9) located in the heating container. The seed crystal is mounded on the base. The apparatus further includes a first inlet (8b) for causing a purge gas to flow along an inner wall surface of the heating container, a purge gas source (14) for supplying the purge gas to the first inlet, a second inlet (93) for causing the purge gas to flow along an outer wall surface of the base, and a mechanism (11) for supporting the base and for supplying the purge gas to the base from below the base. |
申请公布号 |
EP2465979(A2) |
申请公布日期 |
2012.06.20 |
申请号 |
EP20110192939 |
申请日期 |
2011.12.12 |
申请人 |
DENSO CORPORATION |
发明人 |
TOKUDA, YUUICHIROU;HARA, KAZUKUNI;KOJIMA, JUN |
分类号 |
C30B25/14;C30B25/16;C30B29/36 |
主分类号 |
C30B25/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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