Heterojunction Bipolar Transistor,申请号EP20090174032-传众专利搜索

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发明名称	Heterojunction Bipolar Transistor
摘要
申请公布号	EP2315238(B1)	申请公布日期	2012.06.20
申请号	EP20090174032	申请日期	2009.10.26
申请人	NXP B.V.	发明人	DONKERS, JOHANNES JOSEPHUS THEODORUS MARINUS;MERTENS, HANS;VANHOUCKE, TONY
分类号	H01L21/331;H01L21/8249;H01L29/737	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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